Deutsch
| Artikelnummer: | NGB8206NTF4G |
|---|---|
| Hersteller / Marke: | AMI Semiconductor/onsemi |
| Teil der Beschreibung.: | INSULATED GATE BIPOLAR TRANSISTO |
| Datenblätte: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 254+ | $1.0986 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Kollektor-Emitter-Durchbruch (max) | 390 V |
| VCE (on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
| Supplier Device-Gehäuse | D2PAK |
| Serie | - |
| Leistung - max | 150 W |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paket | Bulk |
| Befestigungsart | Surface Mount |
| Eingabetyp | Logic |
| Strom - Kollektor (Ic) (max) | 20 A |




IGBT 365V 20A 165W D2PAK3
NGB8207NG ON
IGBT 365V 20A 165W D2PAK3
IGBT 365V 20A 165W D2PAK
IGBT 390V 20A 150W D2PAK
INSULATED GATE BIPOLAR TRANSISTO
IGNITION IGBT 20 A, 350 V, N-CHA
IGBT IGNITION 350V 20A D2PAK
INSULATED GATE BIPOLAR TRANSISTO
IGBT 390V 20A 150W D2PAK3
IGBT 390V 20A 150W D2PAK
INSULATED GATE BIPOLAR TRANSISTO
IGBT
NGB8207ABNG ON
IGBT 390V 20A 150W D2PAK
IGBT, 20A, 390V, N-CHANNEL
IGBT 490V 20A 150W D2PAK3
IGBT 390V 20A 150W D2PAK3
2026/05/12
2026/05/8
2026/04/28
2026/04/20
2026/04/17
2026/04/8
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel





2026/05/21
2026/05/20
2026/05/20
2026/05/20
NGB8206NTF4Gonsemi |
Anzahl*
|
Zielpreis (USD)
|