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| Artikelnummer: | RGF1KHE3_B/I |
|---|---|
| Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
| Teil der Beschreibung.: | DIODE GEN PURP 800V 1A DO214BA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 800 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214BA (GF1) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101, Superectifier® |
| Rückwärts-Erholzeit (Trr) | 500 ns |
| Verpackung / Gehäuse | DO-214BA |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -65°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 8.5pF @ 4V, 1MHz |
| Grundproduktnummer | RGF1K |




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RGF1KHE3_B/IVishay General Semiconductor - Diodes Division |
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