Deutsch
| Artikelnummer: | RS1JL RHG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GP 600V 800MA SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 250 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 800mA |
| Kapazität @ Vr, F | 10pF @ 4V, 1MHz |
| Grundproduktnummer | RS1J |
| RS1JL RHG Einzelheiten PDF [English] | RS1JL RHG PDF - EN.pdf |




DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
250NS, 0.8A, 600V, FAST RECOVERY
DIODE GEN PURP 600V 1A DO214AC
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
250NS, 0.8A, 600V, FAST RECOVERY
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
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RS1JL RHGTaiwan Semiconductor Corporation |
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