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| Artikelnummer: | RS1JL R3G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GP 600V 800MA SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.1481 |
| 200+ | $0.0574 |
| 500+ | $0.0553 |
| 1000+ | $0.0544 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 250 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 800mA |
| Kapazität @ Vr, F | 10pF @ 4V, 1MHz |
| Grundproduktnummer | RS1J |
| RS1JL R3G Einzelheiten PDF [English] | RS1JL R3G PDF - EN.pdf |




DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
250NS, 0.8A, 600V, FAST RECOVERY
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A DO214AC
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
250NS, 0.8A, 600V, FAST RECOVERY
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GP 600V 800MA SUB SMA
DIODE GP 600V 800MA SUB SMA
DIODE GEN PURP 600V 1A DO214AC
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RS1JL R3GTaiwan Semiconductor Corporation |
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