Deutsch
| Artikelnummer: | HS1JL |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | 75NS, 1A, 600V, HIGH EFFICIENT R |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 20000+ | $0.2102 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 75 ns |
| Verpackung / Gehäuse | SOD-123 |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 15pF @ 4V, 1MHz |
| HS1JL Einzelheiten PDF [English] | HS1JL PDF - EN.pdf |




TSC SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A THIN SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SOD128
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
75NS, 1A, 600V, HIGH EFFICIENT R
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SOD123F
75NS, 1A, 600V, HIGH EFFICIENT R
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
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HS1JLTaiwan Semiconductor Corporation |
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