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| Artikelnummer: | HS1JL R3G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 1A SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 75 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 15pF @ 4V, 1MHz |
| Grundproduktnummer | HS1J |
| HS1JL R3G Einzelheiten PDF [English] | HS1JL R3G PDF - EN.pdf |




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75NS, 1A, 600V, HIGH EFFICIENT R
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SUB SMA
75NS, 1A, 600V, HIGH EFFICIENT R
75NS, 1A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 600V 1A SOD123F
DIODE GEN PURP 600V 1A SUB SMA
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HS1JL R3GTaiwan Semiconductor Corporation |
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