Deutsch
| Artikelnummer: | HS1DL MTG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 200V 1A SUB SMA |
| Datenblätte: |
|
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 50 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 200 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 20pF @ 4V, 1MHz |
| Grundproduktnummer | HS1D |
| HS1DL MTG Einzelheiten PDF [English] | HS1DL MTG PDF - EN.pdf |




DIODE GEN PURP 200V 1A DFLAT
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SOD123F
50NS, 1A, 200V, HIGH EFFICIENT R
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
50NS, 1A, 200V, HIGH EFFICIENT R
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SOD128
DIODE GEN PURP 200V 1A SUB SMA
50NS, 1A, 200V, HIGH EFFICIENT R
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SOD123W
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel






2025/02/16
2024/09/19
2025/02/3
2025/06/18
HS1DL MTGTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|