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| Artikelnummer: | HS1DH |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | 50NS, 1A, 200V, HIGH EFFICIENT R |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 15000+ | $0.0846 |
| 30000+ | $0.0792 |
| 75000+ | $0.0788 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AC (SMA) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Rückwärts-Erholzeit (Trr) | 50 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | DO-214AC, SMA |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 200 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 20pF @ 4V, 1MHz |




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DIODE GEN PURP 200V 1A DO214AC
50NS, 1A, 200V, HIGH EFFICIENT R
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HS1DHTaiwan Semiconductor Corporation |
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