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| Artikelnummer: | ES1JL MHG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 1A SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 35 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 8pF @ 1V, 1MHz |
| Grundproduktnummer | ES1J |
| ES1JL MHG Einzelheiten PDF [English] | ES1JL MHG PDF - EN.pdf |




DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SOD128
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
Interface
DIODE GEN PURP 600V 1A SUB SMA
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DIODE GEN PURP 600V 1A SUB SMA
ES1JG Original
ES1JL RQ TAIWAN
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ES1JL MHGTaiwan Semiconductor Corporation |
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