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| Artikelnummer: | 1N4006GHA0G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 800V 1A DO204AL |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 800 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-204AL (DO-41) |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Verpackung / Gehäuse | DO-204AL, DO-41, Axial |
| Paket | Tape & Box (TB) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 10pF @ 4V, 1MHz |
| Grundproduktnummer | 1N4006 |
| 1N4006GHA0G Einzelheiten PDF [English] | 1N4006GHA0G PDF - EN.pdf |




DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO41
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURPOSE DO41
RECTRON DO-41
DIODE GEN PURP 800V 1A DO41
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO41
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO41
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO41
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
DIODE GEN PURP 800V 1A DO204AL
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1N4006GHA0GTaiwan Semiconductor Corporation |
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