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| Artikelnummer: | AS1M080120P |
|---|---|
| Hersteller / Marke: | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Teil der Beschreibung.: | N-CHANNEL SILICON CARBIDE POWER |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $11.1267 |
| 10+ | $10.2232 |
| 100+ | $8.6338 |
| 500+ | $7.6804 |
| 1000+ | $7.0448 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 4V @ 5mA |
| Vgs (Max) | +25V, -10V |
| Technologie | SiCFET (Silicon Carbide) |
| Supplier Device-Gehäuse | TO-247-3 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Verlustleistung (max) | 192W (Tc) |
| Verpackung / Gehäuse | TO-247-3 |
| Paket | Tube |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds | 1475 pF @ 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 20V |
| Drain-Source-Spannung (Vdss) | 1200 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 36A (Tc) |




DIODE AVALANCHE 1KV 1.5A DO219AB
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVAL 100V 1.5A DO220AA
DIODE AVALANCHE 1KV 1.5A DO219AB
DIODE GEN PURP 400V 1A DO214AC
DIODE AVALANCHE 1KV 1.5A DO219AB
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVALANCHE 100V 1.5A DO220
VISHAY DO-220A(SMP)
DIODE AVAL 100V 1.5A DO220AA
DIODE AVAL 200V 1.5A DO220AA
DIODE GEN PURP 600V 1A DO214AC
N-CHANNEL SILICON CARBIDE POWER
DIODE GEN PURP 1KV 1A DO214AC
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVAL 100V 1.5A DO220AA
DIODE AVAL 100V 1.5A DO220AA
N-CHANNEL SILICON CARBIDE POWER
N-CHANNEL SILICON CARBIDE POWER
DIODE GEN PURP 800V 1A DO214AC
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AS1M080120PANBON SEMICONDUCTOR (INT'L) LIMITED |
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