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| Artikelnummer: | AS1M025120P |
|---|---|
| Hersteller / Marke: | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Teil der Beschreibung.: | N-CHANNEL SILICON CARBIDE POWER |
| Datenblätte: |
|
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $36.6677 |
| 10+ | $33.8161 |
| 100+ | $28.8769 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 4V @ 15mA |
| Vgs (Max) | +25V, -10V |
| Technologie | SiCFET (Silicon Carbide) |
| Supplier Device-Gehäuse | TO-247-3 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Verlustleistung (max) | 463W (Tc) |
| Verpackung / Gehäuse | TO-247-3 |
| Paket | Tube |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds | 3600 pF @ 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 20 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 20V |
| Drain-Source-Spannung (Vdss) | 1200 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 90A (Tc) |




DIODE GEN PURP 800V 1A DO214AC
N-CHANNEL SILICON CARBIDE POWER
DIODE AVAL 100V 1.5A DO220AA
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVALANCHE 1KV 1.5A DO219AB
N-CHANNEL SILICON CARBIDE POWER
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 400V 1A DO214AC
DIODE AVALANCHE 1KV 1.5A DO219AB
DIODE AVALANCHE 1KV 1.5A DO219AB
N-CHANNEL SILICON CARBIDE POWER
DIODE AVAL 800V 1.5A DO219AB
DIODE AVALANCHE 1KV 1.5A DO219AB
DIODE GEN PURP 1KV 1A DO214AC
DIODE AVAL 100V 1.5A DO220AA
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVALANCHE 100V 1.5A DO220
DIODE AVAL 800V 1.5A DO219AB
DIODE AVAL 100V 1.5A DO220AA
DIODE AVALANCHE 100V 1.5A DO220
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AS1M025120PANBON SEMICONDUCTOR (INT'L) LIMITED |
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