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| Artikelnummer: | S1JLSH |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | 1.2A, 600V, STANDARD RECOVERY RE |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.0574 |
| 200+ | $0.0229 |
| 500+ | $0.0222 |
| 1000+ | $0.0218 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.3 V @ 1.2 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | SOD-123HE |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Verpackung / Gehäuse | SOD-123H |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 1.2A |
| Kapazität @ Vr, F | - |




DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
1A, 600V, STANDARD RECOVERY RECT
DIODES SMA
DIODE GEN PURP 600V 1A SUB SMA
1.2A, 600V, STANDARD RECOVERY RE
DIODE GP 600V 1.2A SOD123HE
DIODE GEN PURP 600V 1A SOD123W
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A MICRO SMA
DIODE GEN PURP 600V 1A SUB SMA
TAIWAN SEMICONDUCTOR SOD123
1A, 600V, STANDARD RECOVERY RECT
DIODE GP 600V 1.2A SOD123HE
DIODE GEN PURP 600V 1A SOD123W
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
TSM SMD
DIODE GEN PURP 600V 1A SOD123W
DIODE GEN PURP 600V 1A MICRO SMA
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S1JLSHTaiwan Semiconductor Corporation |
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