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| Artikelnummer: | S1JHR3G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 1A DO214AC |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AC (SMA) |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Rückwärts-Erholzeit (Trr) | 1.5 µs |
| Verpackung / Gehäuse | DO-214AC, SMA |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 1 µA @ 600 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 12pF @ 4V, 1MHz |
| Grundproduktnummer | S1J |
| S1JHR3G Einzelheiten PDF [English] | S1JHR3G PDF - EN.pdf |




DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A DO214AC
VISHAY SMA
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A DO214AC
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
DIODE GEN PURP 600V 1A SUB SMA
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S1JHR3GTaiwan Semiconductor Corporation |
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