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| Artikelnummer: | S1DLHR3G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 200V 1A SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Rückwärts-Erholzeit (Trr) | 1.8 µs |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 200 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 9pF @ 4V, 1MHz |
| Grundproduktnummer | S1D |
| S1DLHR3G Einzelheiten PDF [English] | S1DLHR3G PDF - EN.pdf |




1A, 200V, STANDARD RECOVERY RECT
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GP 200V 1.2A SOD123HE
DIODE GEN PURP 200V 1A SUB SMA
DIODE GP 200V 1.2A SOD123HE
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GP 200V 1.2A SOD123HE
DIODE GP 200V 1.2A SOD123HE
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S1DLHR3GTaiwan Semiconductor Corporation |
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