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| Artikelnummer: | S1BLHMHG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 100V 1A SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Spannung - Sperr (Vr) (max) | 100 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Rückwärts-Erholzeit (Trr) | 1.8 µs |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 9pF @ 4V, 1MHz |
| Grundproduktnummer | S1B |
| S1BLHMHG Einzelheiten PDF [English] | S1BLHMHG PDF - EN.pdf |




S1BP6 TOSHIBA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
1A, 100V, STANDARD RECOVERY RECT
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
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S1BLHMHGTaiwan Semiconductor Corporation |
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