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| Artikelnummer: | HS3JBH |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | 75NS, 3A, 600V, HIGH EFFICIENT R |
| Datenblätte: |
|
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.1247 |
| 200+ | $0.0498 |
| 500+ | $0.0481 |
| 1000+ | $0.0473 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AA (SMB) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Rückwärts-Erholzeit (Trr) | 75 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | DO-214AA, SMB |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 10 µA @ 600 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 50pF @ 4V, 1MHz |




HS3JB R5 TSC
DIODE GEN PURP 800V 3A DO214AB
75NS, 3A, 600V, HIGH EFFICIENT R
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AA
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AA
DIODE GEN PURP 600V 3A DO214AA
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
Diodes - Rectifiers - Single SMC
DIODE GEN PURP 600V 3A DO214AB
SMC
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
Diodes - Rectifiers - Single SMB
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AA
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HS3JBHTaiwan Semiconductor Corporation |
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