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| Artikelnummer: | HS3J M6G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 3A DO214AB |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AB (SMC) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 75 ns |
| Verpackung / Gehäuse | DO-214AB, SMC |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 10 µA @ 600 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 50pF @ 4V, 1MHz |
| Grundproduktnummer | HS3J |
| HS3J M6G Einzelheiten PDF [English] | HS3J M6G PDF - EN.pdf |




HS3J T/R Original
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
50NS, 3A, 400V, HIGH EFFICIENT R
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 400V 3A DO214AA
50NS, 3A, 400V, HIGH EFFICIENT R
DIODE GEN PURP 600V 3A DO214AB
DIODE GEN PURP 600V 3A DO214AB
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DIODE GEN PURP 600V 3A DO214AA
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DIODE GEN PURP 600V 3A DO214AB
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HS3J M6GTaiwan Semiconductor Corporation |
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