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| Artikelnummer: | HERAF1006G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 10A ITO220AC |
| Datenblätte: | None |
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.4088 |
| 200+ | $0.1631 |
| 500+ | $0.1577 |
| 1000+ | $0.155 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | ITO-220AC |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 80 ns |
| Verpackung / Gehäuse | TO-220-2 Full Pack |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tube |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 10 µA @ 600 V |
| Strom - Richt (Io) | 10A |
| Kapazität @ Vr, F | 60pF @ 4V, 1MHz |
| HERAF1006G Einzelheiten PDF [English] | HERAF1006G PDF - EN.pdf |




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HERAF1006GTaiwan Semiconductor Corporation |
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