Deutsch
| Artikelnummer: | ESH3B V6G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 100V 3A DO214AB |
| Datenblätte: |
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| RoHs Status: | Bleifrei / RoHS-konform |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 6000+ | $0.1107 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Sperr (Vr) (max) | 100V |
| Supplier Device-Gehäuse | DO-214AB (SMC) |
| Standardpaket | 3,000 |
| Geschwindigkeit | Fast Recovery = 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 20ns |
| Teilstatus | Active |
| Verpackung / Gehäuse | DO-214AB, SMC |
| Andere Namen | ESH3B V6G-ND ESH3BV6G |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit | 8 Weeks |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Diodentyp | Standard |
| detaillierte Beschreibung | Diode Standard 100V 3A Surface Mount DO-214AB (SMC) |
| Strom - Sperrleckstrom @ Vr | 5µA @ 100V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 45pF @ 4V, 1MHz |
| ESH3B V6G Einzelheiten PDF [English] | ESH3B V6G PDF - EN.pdf |




DIODE GEN PURP 100V 3A DO214AB
20NS, 3A, 100V, ULTRA FAST RECOV
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
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