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| Artikelnummer: | ESH3B R7G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 100V 3A DO214AB |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Spannung - Sperr (Vr) (max) | 100 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AB (SMC) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 20 ns |
| Verpackung / Gehäuse | DO-214AB, SMC |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 45pF @ 4V, 1MHz |
| Grundproduktnummer | ESH3 |
| ESH3B R7G Einzelheiten PDF [English] | ESH3B R7G PDF - EN.pdf |




CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
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ESH3B R7GTaiwan Semiconductor Corporation |
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