Deutsch
| Artikelnummer: | ESH3B R6G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 100V 3A DO214AB |
| Datenblätte: |
|
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Spannung - Sperr (Vr) (max) | 100 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AB (SMC) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 20 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | DO-214AB, SMC |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 45pF @ 4V, 1MHz |




DIODE GEN PURP 100V 3A DO214AB
CAP ALUM 3300UF 20% 16V RADIAL
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
CAP ALUM RAD 105C
CAP ALUM RAD 105C
DIODE GEN PURP 100V 3A DO214AB
2026/04/20
2026/04/17
2026/04/8
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel




2025/02/13
2024/11/5
2024/12/17
2025/01/23
ESH3B R6GTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|