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| Artikelnummer: | ES1BL RTG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 100V 1A SUB SMA |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Spannung - Sperr (Vr) (max) | 100 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | Sub SMA |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 35 ns |
| Verpackung / Gehäuse | DO-219AB |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
| Strom - Richt (Io) | 1A |
| Kapazität @ Vr, F | 10pF @ 1V, 1MHz |
| Grundproduktnummer | ES1B |
| ES1BL RTG Einzelheiten PDF [English] | ES1BL RTG PDF - EN.pdf |




DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
VISHAYMAS SOD123
TAIWAN SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
DIODE GEN PURP 100V 1A SUB SMA
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ES1BL RTGTaiwan Semiconductor Corporation |
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