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| Artikelnummer: | 1N5406GH |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 3A DO201AD |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.124 |
| 200+ | $0.0495 |
| 500+ | $0.0478 |
| 1250+ | $0.0471 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-201AD |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 |
| Verpackung / Gehäuse | DO-201AD, Axial |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 25pF @ 4V, 1MHz |
| Grundproduktnummer | 1N5406 |




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1N5406GHTaiwan Semiconductor Corporation |
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