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| Artikelnummer: | JANKCDR2N2907A |
|---|---|
| Hersteller / Marke: | Micrel / Microchip Technology |
| Teil der Beschreibung.: | SMALL-SIGNAL BJT |
| Datenblätte: |
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| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Kollektor-Emitter-Durchbruch (max) | 60 V |
| VCE Sättigung (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Transistor-Typ | PNP |
| Supplier Device-Gehäuse | TO-18 (TO-206AA) |
| Serie | Military, MIL-PRF-19500/291 |
| Leistung - max | 500 mW |
| Verpackung / Gehäuse | TO-206AA, TO-18-3 Metal Can |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Bulk |
| Betriebstemperatur | -65°C ~ 200°C (TJ) |
| Befestigungsart | Through Hole |
| Frequenz - Übergang | - |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 100 @ 150mA, 10V |
| Strom - Collector Cutoff (Max) | 50nA |
| Strom - Kollektor (Ic) (max) | 600 mA |




RH POWER BJT
TRANS NPN 80V 2A TO39
RH POWER BJT
RH POWER BJT
DIODE GEN PURP 100V 1A DIE
DIODE GEN PURP 50V 3A DIE
DIODE GEN PURP 100V 3A DIE
RH POWER BJT
DIODE GEN PURP 150V 1A DIE
RH POWER BJT
TRANS NPN 80V 2A TO39
RH SMALL-SIGNAL BJT
DIODE GEN PURP 150V 3A DIE
DIODE GEN PURP 50V 1A DIE
TRANS NPN 80V 2A TO39
RH POWER BJT
RH POWER BJT
TRANS NPN 80V 2A TO39
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JANKCDR2N2907AMicrochip Technology |
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