Deutsch

| Artikelnummer: | RS1E350GNTB |
|---|---|
| Hersteller / Marke: | LAPIS Technology |
| Teil der Beschreibung.: | MOSFET N-CH 30V 35A/80A 8HSOP |
| Datenblätte: | None |
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $1.0012 |
| 200+ | $0.3997 |
| 500+ | $0.3864 |
| 1000+ | $0.3805 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 2.5V @ 1mA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | 8-HSOP |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 35A, 10V |
| Verlustleistung (max) | 3W (Ta) |
| Verpackung / Gehäuse | 8-PowerTDFN |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur | 150°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 4060 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain-Source-Spannung (Vdss) | 30 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 35A (Ta), 80A (Tc) |
| Grundproduktnummer | RS1E |




DIODE GEN PURP 200V 1A DO219AB
MOSFET N-CH 30V 30A/80A 8HSOP
DIODE GEN PURP 400V 1A DO219AB
MOSFET N-CH 30V 32A/80A 8HSOP
MOSFET N-CH 30V 35A 8HSOP
NCH 30V 80A POWER MOSFET: RS1E35
DIODE GEN PURP 800V 1A DO219AB
RS1E350BNFU7TB ROHM
MOSFET N-CH 30V 32A 8HSOP
RS1E320GN ROHM
DIODE GEN PURP 600V 1A DO219AB
DIODE GEN PURP 200V 1A DO219AB
DIODE GEN PURP 400V 1A DO219AB
DIODE GEN PURP 200V 1A DO219AB
DIODE GEN PURP 600V 1A DO219AB
RS1E350BN QQ2850920316
DIODE GEN PURP 800V 1A DO219AB
2026/04/20
2026/04/17
2026/04/8
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel






2025/01/27
2024/11/13
2025/06/24
2025/04/26
RS1E350GNTBRohm Semiconductor |
Anzahl*
|
Zielpreis (USD)
|