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| Artikelnummer: | G80N03K |
|---|---|
| Hersteller / Marke: | Goford Semiconductor |
| Teil der Beschreibung.: | N30V, 80A,RD<6.5M@10V,VTH1.0V~2. |
| Datenblätte: |
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| RoHs Status: | RoHS-konform |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 5+ | $0.0897 |
| 50+ | $0.0879 |
| 150+ | $0.0865 |
| 500+ | $0.0747 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 2V @ 250µA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-252 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 25A, 10V |
| Verlustleistung (max) | 69W (Tc) |
| Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Paket | Tape & Reel (TR) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 1950 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain-Source-Spannung (Vdss) | 30 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 80A (Tc) |




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G80N03KGoford Semiconductor |
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