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| Artikelnummer: | 2N7635-GA |
|---|---|
| Hersteller / Marke: | GeneSiC Semiconductor |
| Teil der Beschreibung.: | TRANS SJT 650V 4A TO257 |
| Datenblätte: |
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| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | - |
| Vgs (Max) | - |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device-Gehäuse | TO-257 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| Verlustleistung (max) | 47W (Tc) |
| Verpackung / Gehäuse | TO-257-3 |
| Paket | Bulk |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur | -55°C ~ 225°C (TJ) |
| Befestigungsart | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds | 324 pF @ 35 V |
| Typ FET | - |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | - |
| Drain-Source-Spannung (Vdss) | 650 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 4A (Tc) (165°C) |
| 2N7635-GA Einzelheiten PDF [English] | 2N7635-GA PDF - EN.pdf |




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2N7635-GAGeneSiC Semiconductor |
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