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| Artikelnummer: | GPIHV5DK |
|---|---|
| Hersteller / Marke: | GaNPower |
| Teil der Beschreibung.: | GaNFET N-CH 1200V 5A TO252 |
| Datenblätte: |
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| RoHs Status: | RoHS-konform |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 1.7V @ 3.5mA |
| Vgs (Max) | +7.5V, -12V |
| Technologie | GaNFET (Gallium Nitride) |
| Serie | - |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Eingabekapazität (Ciss) (Max) @ Vds | 90 pF @ 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 6 V |
| Typ FET | N-Channel |
| Antriebsspannung (Max Rds On, Min Rds On) | 6V |
| Drain-Source-Spannung (Vdss) | 1200 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 5A |




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