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| Artikelnummer: | FDH3632 |
|---|---|
| Hersteller / Marke: | Fairchild (onsemi) |
| Teil der Beschreibung.: | POWER FIELD-EFFECT TRANSISTOR, 1 |
| Datenblätte: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-247 |
| Serie | PowerTrench® |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 80A, 10V |
| Verlustleistung (max) | 310W (Tc) |
| Verpackung / Gehäuse | TO-247-3 |
| Paket | Bulk |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
| Drain-Source-Spannung (Vdss) | 100 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 12A (Ta), 80A (Tc) |
| FDH3632 Einzelheiten PDF [English] | FDH3632 PDF - EN.pdf |




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FDH3632Fairchild Semiconductor |
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