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| Artikelnummer: | 1N3070 |
|---|---|
| Hersteller / Marke: | National Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 200V 100MA DO35 |
| Datenblätte: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.0206 |
| 200+ | $0.008 |
| 500+ | $0.0078 |
| 1000+ | $0.0076 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-35 |
| Geschwindigkeit | Small Signal =< 200mA (Io), Any Speed |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 50 ns |
| Verpackung / Gehäuse | DO-204AH, DO-35, Axial |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Bulk |
| Betriebstemperatur - Anschluss | - |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 100 nA @ 175 V |
| Strom - Richt (Io) | 100mA |
| Kapazität @ Vr, F | - |
| 1N3070 Einzelheiten PDF [English] | 1N3070 PDF - EN.pdf |




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1N3070National Semiconductor |
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