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| Artikelnummer: | NVMFWS2D3P04M8LT1G |
|---|---|
| Hersteller / Marke: | AMI Semiconductor/onsemi |
| Teil der Beschreibung.: | MV8 P INITIAL PROGRAM |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $4.3341 |
| 200+ | $1.6775 |
| 500+ | $1.6183 |
| 1500+ | $1.5893 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 2.4V @ 2.7mA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | 5-DFN (5x6) (8-SOFL) |
| Serie | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| Verlustleistung (max) | 3.8W (Ta), 205W (Tc) |
| Verpackung / Gehäuse | 8-PowerTDFN, 5 Leads |
| Paket | Tape & Reel (TR) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 5985 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 10 V |
| Typ FET | P-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain-Source-Spannung (Vdss) | 40 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 31A (Ta), 222A (Tc) |




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