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| Artikelnummer: | SIDR638DP-T1-GE3 |
|---|---|
| Hersteller / Marke: | Vishay / Siliconix |
| Teil der Beschreibung.: | MOSFET N-CH 40V 100A PPAK SO-8DC |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $4.5881 |
| 10+ | $4.0578 |
| 30+ | $3.7436 |
| 100+ | $3.3057 |
| 500+ | $3.1592 |
| 1000+ | $3.0924 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 2.3V @ 250µA |
| Vgs (Max) | +20V, -16V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | PowerPAK® SO-8DC |
| Serie | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| Verlustleistung (max) | 125W (Tc) |
| Verpackung / Gehäuse | PowerPAK® SO-8 |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain-Source-Spannung (Vdss) | 40 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 100A (Tc) |
| Grundproduktnummer | SIDR638 |
| SIDR638DP-T1-GE3 Einzelheiten PDF [English] | SIDR638DP-T1-GE3 PDF - EN.pdf |




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SIDR638DP-T1-GE3Vishay Siliconix |
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