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| Artikelnummer: | EMB10FHAT2R |
|---|---|
| Hersteller / Marke: | LAPIS Technology |
| Teil der Beschreibung.: | PNP+PNP DIGITAL TRANSISTOR (CORR |
| Datenblätte: | None |
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
| VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor-Typ | 2 PNP - Pre-Biased (Dual) |
| Supplier Device-Gehäuse | EMT6 |
| Serie | Automotive, AEC-Q101 |
| Widerstand - Emitterbasis (R2) | 47kOhms |
| Widerstand - Basis (R1) | 2.2kOhms |
| Leistung - max | 150mW |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | SOT-563, SOT-666 |
| Paket | Tape & Reel (TR) |
| Befestigungsart | Surface Mount |
| Frequenz - Übergang | 250MHz |
| DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 10mA, 5V |
| Strom - Collector Cutoff (Max) | 500nA |
| Strom - Kollektor (Ic) (max) | 100mA |
| Grundproduktnummer | EMB10 |




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EMB10FHAT2RRohm Semiconductor |
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