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| Artikelnummer: | G2R1000MT17D |
|---|---|
| Hersteller / Marke: | GeneSiC Semiconductor |
| Teil der Beschreibung.: | SIC MOSFET N-CH 4A TO247-3 |
| Datenblätte: |
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| RoHs Status: | RoHS-konform |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $4.2152 |
| 10+ | $3.6073 |
| 30+ | $3.246 |
| 90+ | $2.8804 |
| 510+ | $2.7133 |
| 990+ | $2.6368 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 5.5V @ 500µA |
| Vgs (Max) | +25V, -10V |
| Technologie | SiCFET (Silicon Carbide) |
| Supplier Device-Gehäuse | TO-247-3 |
| Serie | G2R™ |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| Verlustleistung (max) | 44W (Tc) |
| Verpackung / Gehäuse | TO-247-3 |
| Paket | Tube |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Through Hole |
| Eingabekapazität (Ciss) (Max) @ Vds | 111 pF @ 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 20 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 20V |
| Drain-Source-Spannung (Vdss) | 1700 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 5A (Tc) |
| Grundproduktnummer | G2R1000 |




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G2R1000MT17DGeneSiC Semiconductor |
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