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| Artikelnummer: | 1N8028-GA |
|---|---|
| Hersteller / Marke: | GeneSiC Semiconductor |
| Teil der Beschreibung.: | DIODE SIL CARB 1.2KV 9.4A TO257 |
| Datenblätte: |
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| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Spannung - Sperr (Vr) (max) | 1200 V |
| Technologie | SiC (Silicon Carbide) Schottky |
| Supplier Device-Gehäuse | TO-257 |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 0 ns |
| Verpackung / Gehäuse | TO-257-3 |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tube |
| Betriebstemperatur - Anschluss | -55°C ~ 250°C |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 20 µA @ 1200 V |
| Strom - Richt (Io) | 9.4A |
| Kapazität @ Vr, F | 884pF @ 1V, 1MHz |
| Grundproduktnummer | 1N8028 |
| 1N8028-GA Einzelheiten PDF [English] | 1N8028-GA PDF - EN.pdf |




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