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| Artikelnummer: | MRF6V2010 |
|---|---|
| Hersteller / Marke: | NXP SEMICONDUCTORS |
| Teil der Beschreibung.: | NXP SEMICONDUCTORS TO270-2 |
| Datenblätte: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $50.1492 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Serie | - |
| RoHs Status | Lead free / RoHS Compliant |
| Bedingung | New Original Stock |
| Garantie | 100% Perfect Functions |
| Vorlaufzeit | 2-3days after payment. |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Zahlungsmittel | PayPal / Credit Card / Telegraphic Transfer |
| Versand per | DHL / Fedex / UPS |
| Hafen | HongKong |
| Anfrage-E-Mail | Info@Y-IC.com |




RF ULTRA HIGH FREQUENCY BAND, N-
FET RF 110V 220MHZ TO272-4
FET RF 110V 220MHZ TO-270G-2
FET RF 110V 220MHZ TO-272-2
Freescal NI/780S
RF POWER FIELD-EFFECT TRANSISTOR
FET RF 110V 220MHZ TO270-2
FET RF 110V 220MHZ TO272-2
FET RF 100V 1.4GHZ NI780S
RF MOSFET LDMOS 50V NI-780S
Lateral N-Channel Single-Ended B
FET RF 100V 1.4GHZ NI780
FET RF 120V 1.3GHZ NI780S
FET RF 100V 1.4GHZ NI780S
RF MOSFET LDMOS 50V NI780H
RF POWER FIELD-EFFECT TRANSISTOR
RF Power Field-Effect Transistor
RF POWER FIELD-EFFECT TRANSISTOR
FET RF 110V 220MHZ TO-270G-2
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MRF6V2010NXP SEMICONDUCTORS |
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