Deutsch
| Artikelnummer: | EPC2108ENGRT |
|---|---|
| Hersteller / Marke: | EPC |
| Teil der Beschreibung.: | TRANS GAN 3N-CH BUMPED DIE |
| Datenblätte: |
|
| RoHs Status: | Bleifrei / RoHS-konform |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $2.0079 |
| 10+ | $1.8108 |
| 25+ | $1.6167 |
| 100+ | $1.455 |
| 250+ | $1.2933 |
| 500+ | $1.1317 |
| 1000+ | $0.9377 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device-Gehäuse | 9-BGA (1.35x1.35) |
| Standardpaket | 1 |
| Serie | eGaN® |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Leistung - max | - |
| Teilstatus | Active |
| Verpackung | Original-Reel® |
| Verpackung / Gehäuse | 9-VFBGA |
| Andere Namen | 917-EPC2108ENGRDKR |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Typ FET | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET-Merkmal | GaNFET (Gallium Nitride) |
| Drain-Source-Spannung (Vdss) | 60V, 100V |
| detaillierte Beschreibung | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 1.7A, 500mA |
| EPC2108ENGRT Einzelheiten PDF [English] | EPC2108ENGRT PDF - EN.pdf |




IC LOW SIDE DRIVER 5A 10BGA
TRANS GAN 2N-CH 100V BUMPED DIE
GANFET 3 N-CH 60V/100V 9BGA
TRANS GAN 2N-CH 80V BUMPED DIE
IC LOW SIDE DRIVER 10A 10BGA
GANFET 2NCH 100V 23A DIE
GAN TRANS ASYMMETRICAL HALF BRID
IC LASER DRVR 40V 10A LVDSLOGIC
GAN TRANS 2N-CH 120V BUMPED DIE
TRANS GAN 3N-CH 100V BUMPED DIE
IC LASER DRVER 40V 10A 3.3VLOGIC
GANFET 3 N-CH 100V 9BGA
TRANS GAN ASYMMETRICAL HALF BRID
GANFET TRANS SYM 100V BUMPED DIE
GANFET 2NCH 80V 9.5A DIE
GAN TRANS 2N-CH 100V BUMPED DIE
GANFET 2NCH 120V 3.4A DIE
IC HALF BRIDGE DRVR 12.5A 12LGA
GAN TRANS ASYMMETRICAL HALF BRID
IC LASER DRVR 40V 10A 3.3V 6BMPD
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel







2025/01/22
2025/03/28
2025/01/21
2025/02/10
EPC2108ENGRTEPC |
Anzahl*
|
Zielpreis (USD)
|