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| Artikelnummer: | SE30PABHM3/I |
|---|---|
| Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
| Teil der Beschreibung.: | DIODE GEN PURP 600V 3A DO221BC |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $0.2137 |
| 200+ | $0.0853 |
| 500+ | $0.0825 |
| 1000+ | $0.0811 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.16 V @ 3 A |
| Spannung - Sperr (Vr) (max) | 600 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-221BC (SMPA) |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101, eSMP® |
| Rückwärts-Erholzeit (Trr) | 1.3 µs |
| Verpackung / Gehäuse | DO-221BC, SMA Flat Leads Exposed Pad |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 600 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 13pF @ 4V, 1MHz |
| Grundproduktnummer | SE30 |
| SE30PABHM3/I Einzelheiten PDF [English] | SE30PABHM3/I PDF - EN.pdf |




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BACKSHELL
DIODE GEN PURP 600V 3A DFN3820A
DIODE GEN PURP 600V 3A DFN3820A
DIODE GEN PURP 400V 3A DFN3820A
DIODE GEN PURP 400V 3A DO221BC
DIODE GEN PURP 600V 3A DO221BC
DIODE GEN PURP 200V 3A DO221BC
DIODE GEN PURP 600V 3A DO221BC
DIODE GEN PURP 200V 3A DFN3820A
DIODE GEN PURP 200V 3A DO221BC
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SE30PABHM3/IVishay General Semiconductor - Diodes Division |
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