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| Artikelnummer: | GPAS1003 MNG |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 200V 10A TO263AB |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | TO-263AB (D²PAK) |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | - |
| Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paket | Tape & Reel (TR) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 200 V |
| Strom - Richt (Io) | 10A |
| Kapazität @ Vr, F | 50pF @ 4V, 1MHz |
| Grundproduktnummer | GPAS1003 |
| GPAS1003 MNG Einzelheiten PDF [English] | GPAS1003 MNG PDF - EN.pdf |




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GPAS1003 MNGTaiwan Semiconductor Corporation |
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