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| Artikelnummer: | XK1R9F10QB,LXGQ |
|---|---|
| Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
| Teil der Beschreibung.: | MOSFET N-CH 100V 160A TO220SM |
| Datenblätte: | None |
| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $3.7102 |
| 10+ | $3.3287 |
| 100+ | $2.727 |
| 500+ | $2.3214 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 3.5V @ 1mA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | TO-220SM(W) |
| Serie | U-MOSX-H |
| Rds On (Max) @ Id, Vgs | 1.92mOhm @ 80A, 10V |
| Verlustleistung (max) | 375W (Tc) |
| Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur | 175°C |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 11500 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
| Drain-Source-Spannung (Vdss) | 100 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 160A (Ta) |
| Grundproduktnummer | XK1R9F10 |




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XK1R9F10QB,LXGQToshiba Semiconductor and Storage |
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