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| Artikelnummer: | JAN1N5809US/TR |
|---|---|
| Hersteller / Marke: | Micrel / Microchip Technology |
| Teil der Beschreibung.: | DIODE GP 100V 3A SQ-MELF B |
| Datenblätte: |
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| RoHs Status: | Lead free / RoHs compliant |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 100+ | $7.8505 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Spannung - Sperr (Vr) (max) | 100 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | B, SQ-MELF |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | Military, MIL-PRF-19500/477 |
| Rückwärts-Erholzeit (Trr) | 30 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | SQ-MELF, B |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -65°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 100 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 60pF @ 10V, 1MHz |




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JAN1N5809US/TRMicrochip Technology |
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