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| Artikelnummer: | R6511ENJTL |
|---|---|
| Hersteller / Marke: | LAPIS Technology |
| Teil der Beschreibung.: | MOSFET N-CH 650V 11A LPTS |
| Datenblätte: | None |
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $1.7012 |
| 200+ | $0.6788 |
| 500+ | $0.6563 |
| 1000+ | $0.6458 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| VGS (th) (Max) @ Id | 4V @ 320µA |
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | LPTS |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V |
| Verlustleistung (max) | 124W (Tc) |
| Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur | 150°C (TJ) |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Befestigungsart | Surface Mount |
| Eingabekapazität (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Drain-Source-Spannung (Vdss) | 650 V |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 11A (Tc) |
| Grundproduktnummer | R6511 |




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