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| Artikelnummer: | GE04MPS06E |
|---|---|
| Hersteller / Marke: | GeneSiC Semiconductor |
| Teil der Beschreibung.: | DIODE SIL CARB 650V 11A TO252-2 |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
| Anzahl | Einzelpreis |
|---|---|
| 1+ | $1.5563 |
| 10+ | $1.3507 |
| 25+ | $1.2771 |
| 100+ | $1.1724 |
| 250+ | $1.1083 |
| 500+ | $1.0621 |
| 1000+ | $1.0178 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
| Spannung - Sperr (Vr) (max) | 650 V |
| Technologie | SiC (Silicon Carbide) Schottky |
| Supplier Device-Gehäuse | TO-252-2 |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Serie | SiC Schottky MPS™ |
| Rückwärts-Erholzeit (Trr) | 0 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Paket | Cut Tape (CT) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 650 V |
| Strom - Richt (Io) | 11A |
| Kapazität @ Vr, F | 186pF @ 1V, 1MHz |




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GE04MPS06EGeneSiC Semiconductor |
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